Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

1988-08-01

1992-03-31

James, Andrew J.

357 52, 357 72, H01L 2934

Patent

active

051012596

ABSTRACT:
A semiconductor device includes at least one wiring layer containing aluminum as the major constituent and provided through an insulating film on a semiconductor substrate on which components or elements are formed, and a heat resistant high molecular organic film having a radical of small water absorbing property provided on side surfaces of the wiring layer. The heat resisting high molecular organic film is preferably formed of polyphenylene sulfide. A method of the semiconductor device includes the steps of forming components on a semiconductor substrate, forming an insulating film on the components to form an aluminum wiring layer by deposition and patterning, depositing a heat resistant high molecular organic film having a radical of small water absorbing property, and heating the heat resistant high molecular organic film at a temperature to fluidify to and flatten the heat resistant high molecular organic film.

REFERENCES:
patent: 4499145 (1985-02-01), Yanagida et al.
patent: 4499149 (1985-02-01), Berger
patent: 4505029 (1985-03-01), Owyang et al.
patent: 4507333 (1985-03-01), Baise et al.
patent: 4520041 (1985-05-01), Aoyama et al.
patent: 4528346 (1985-07-01), Sugie et al.
patent: 4613888 (1986-09-01), Mase et al.
patent: 4707244 (1987-11-01), Harman, III et al.
patent: 4782028 (1988-11-01), Farrier et al.
patent: 4823234 (1989-04-01), Konishi et al.
patent: 4841354 (1989-06-01), Inaba
IEEE Symposium on VLSI Technology, 1986, pp. 59-60.
"Passivation Stress Effect on the Electromigration Lifetime of Al Metallization", Y. Yamaha, et al., Institute of Electronics, Information and Communication Engineers, Apr. 1987, pp. 11-16.

Affiliated with

Also associated with

Rating

Semiconductor device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2263125