Heterostructure laser

Details Heterostructure laser Heterostructure laser

1979-02-09

1981-02-17

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 335, 148172, 331 945H, 357 16, H01L 21208

Patent

active

042512980

ABSTRACT:
A laser p-n junction is formed in a structure consisting of a pair of layers of opposite conductivity type grown by liquid phase epitaxy and having sandwiched therebetween a quantity of active material of higher refractive index and lower band gap. The layers are grown on a substrate having a groove in its surface under conditions such that the active material is thicker in the region overlying the center of the groove than elsewhere and where a dopant is diffused through one of the layers to translate the portions of the p-n junction not overlying the groove into the material of the other layer while leaving the portion of the p-n junction overlying the center of the groove bounded on at least one side by the lower band-gap active material.

REFERENCES:
patent: 4033796 (1977-07-01), Burnham et al.

Affiliated with

Also associated with

Rating

Heterostructure laser does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Heterostructure laser, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Heterostructure laser will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2260693