LED with AlGaInP Bragg layer

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

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Details

257103, 372 96, 372 99, H01L 3300, H01S 319

Patent

active

06130445&

ABSTRACT:
A semiconductor light emitting device includes two AlGaAs and AlGaInP Bragg reflector layers below an active layer.

REFERENCES:
patent: 5428634 (1995-06-01), Bryan et al.
patent: 5675605 (1997-10-01), Fujii

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