Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1999-03-19
2000-10-10
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 21, 257 22, 257184, 257185, 257 17, 438 93, 438 94, H01L 31072, H01L 31109, H01L 310328, H01L 310336
Patent
active
061304417
ABSTRACT:
By using wafer fusion, various structures for photodetectors and photodetectors integrated with other electronics can be achieved. The use of silicon as a multiplication region and III-V compounds as an absorption region create photodetectors that are highly efficient and tailored to specific applications. Devices responsive to different regions of the optical spectrum, or that have higher efficiencies are created.
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Bowers John E.
Hawkins Aaron R.
Mintel William
The Regents of the University of California
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