Process improvements for titanium-tungsten etching in the presen

Details Process improvements for titanium-tungsten etching in the presen Process improvements for titanium-tungsten etching in the presen

1999-08-26

2000-10-10

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

438754, H01L 21461

Patent

active

061301701

ABSTRACT:
A process and etchant solution for chemical wet etching of thin film metals in the presence of a protected metal. The etching solution has a pH range of about 2.7 to 4.0. The etching solution may include hydrogen peroxide, potassium sulfate, and potassium EDTA, and it reduces or eliminates the incidence of etch-resistant metal without damaging the protected metal.

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