Method of phase shift mask fabrication comprising a tapered edge

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430322, G03F 900

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active

056724500

ABSTRACT:
A method for forming a phase shifting photomask is provided. The method includes forming a transparent substrate having a pattern of opaque features and determining areas of phase conflicts between the features. Phase shifters having a tapered edge are formed on selected portions of the features in the phase conflict areas while the remaining portion of the features remain unprotected. During a subsequent lithographic process using the photomask, the tapered edges of the phase shifters spread out the electric field so that an image corresponding to the tapered edges does not print at the target. This permits the phase shifters to be located without the constraints of an alternating aperture pattern. The phase shifters can be formed using an additive process in which a phase shift layer is deposited over the opaque features or using a subtractive process in which the substrate subjacent to the opaque features is etched.

REFERENCES:
patent: 5281500 (1994-01-01), Cathey et al.
patent: 5288568 (1994-02-01), Cathey et al.
patent: 5308722 (1994-05-01), Nistler
patent: 5468578 (1995-11-01), Rolfson
Investigating Phase-Shifting Mask Layout Issues Using a Cad Toolkit, Wong, Alexander S. et al., IEDM Meeting, Washington, D.C., pp. 705-708 Dec. 1991 .

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