Light-emitting semiconductor

Details Light-emitting semiconductor Light-emitting semiconductor

1980-05-28

1982-10-12

Segal, Robert

Electric lamp and discharge devices

With luminescent solid or liquid material

Solid-state type

357 17, H01L 3300

Patent

active

043541402

ABSTRACT:
On a semiconductor substrate of one conductivity type are disposed successively an active semiconductor layer of said one conductivity type, another active semiconductor layer of the other conductivity type and of a low impurity concentration, and a barrier semiconductor layer of the other conductivity type and a high impurity concentration. This another active semiconductor layer constitutes a main radiative region and light emitting in this radiative region is extracted at the side of the barrier layer.
The barrier layer is arranged to form a potential barrier of an appropriate height for those minority carriers in that another active semiconductor layer, and reflects the minority carriers back into the active semiconductor layer.
Non-radiative recombination is thereby reduced, and radiative recombination is promoted. Thus, the light-emitting efficiency is improved.

REFERENCES:
patent: 3267294 (1966-08-01), Dumke et al.
patent: 3537029 (1970-10-01), Kressel et al.
patent: 3600240 (1971-08-01), Rupprecht et al.
patent: 3617820 (1971-11-01), Herzog
patent: 3634872 (1972-01-01), Umeda
patent: 3677836 (1972-07-01), Lorenz
patent: 4049994 (1977-09-01), Ladany
Beppu et al., "High-Efficiency GaP Green LED's by Zinc Diffusion into an n-LPE Layer," IEEE Transactions on Electron Devices, vol. ED-24, No. 7, Jul. 1977, pp. 951-955.

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