Fishing – trapping – and vermin destroying
Patent
1993-06-17
1995-03-28
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 44, 437174, 437907, 437908, H01L 21265, H01L 21306
Patent
active
054016665
ABSTRACT:
XeCl excimer laser annealing for activating a source/drain region of a MOS-FET is carried out without deforming a gate electrode. Generally, a reflectance of a thin film varies in accordance with a cycle of .lambda./2n due to interference of an incident light and a reflection light. A difference of thickness d.sub.1 between a thickness d.sub.3 of the film for attaining a maximum reflectance and a thickness d.sub.2 for attaining a minimum reflectance is indicated by .lambda./4n. Thus, a first SiO.sub.2 film pattern 8 of the thickness d.sub.1 is formed in advance on a gate electrode 7a, and a second SiO.sub.2 film 12 is formed on an entire surface of a wafer so that the thickness of the film on the source drain region (a high-concentration impurity diffused region 11 and an LDD region 9) becomes d.sub.2. Even under conditions for sufficient heating of the source/drain regions, heat generation of the gate electrode 7a can be controlled, thereby preventing deformation thereof.
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patent: 5028552 (1991-07-01), Ushiku
patent: 5028554 (1991-06-01), Kita
patent: 5032535 (1991-07-01), Kamijo et al.
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Chaudhuri Olik
Dutton Brian
Sony Corporation
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