Ion beam shield for implantation systems

Details Ion beam shield for implantation systems Ion beam shield for implantation systems

1996-11-26

1999-04-20

Anderson, Bruce

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250423R, C21K 510, H01J 2700

Patent

active

058959238

ABSTRACT:
An ion implantation system is described having an ion source coupled to a process chamber, and a workpiece handling assembly having a workpiece support that is mounted within the process chamber. The system implants ions into a photoresist coated workpiece to change the conductivity of the workpiece. An ion beam shield is provided that is positioned between the ion source and the workpiece support during processing to prevent outgassed photoresist from coating portions of the ion source.

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