Epitaxial structure for GaP light-emitting diode

Details Epitaxial structure for GaP light-emitting diode Epitaxial structure for GaP light-emitting diode

1997-04-17

1999-04-20

Yamnitzky, Marie

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Including components having same physical characteristic in...

428690, 428700, 428917, 257101, 257103, 117955, 313498, 313503, 313506, H05B 3300

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058957065

ABSTRACT:
An epitaxial structure for a GaP light-emitting diode comprises an n-type GaP single crystal substrate on which is formed a plural buffer layer epitaxially grown on the single crystal substrate, in which the buffer layer has a lower etch pit density than the etch pit density of the single crystal substrate, etch pit density decreases with each upper layer, and a GaP active layer is formed on the buffer layer.

REFERENCES:
patent: 4303464 (1981-12-01), Suzuki
patent: 4671829 (1987-06-01), Kawabata et al.
patent: 5019874 (1991-05-01), Inoue
patent: 5032539 (1991-07-01), Watanabe
patent: 5219632 (1993-06-01), Shimakura
patent: 5571321 (1996-11-01), Yanagisawa et al.
"Correlation between Dislocation Pits in GaP LPE Layers and LEC Substrates", Tatsuro Beppu et al.; Japanese Journal of Applied Physics, vol. 17, No. 3, Mar. 1978; pp. 509-513--Toshiba Research & Development Ctr., Tokyo Shibaura Electric Co., Ltd. Kawasaki.
Etch Pit Studies of GaP Liquid Phase Epitaxial Layers; G.A. Rozonyi and T. Iizuka Japanese Electrochemical Society, May 1973, pp. 673-678--Bell Laboratories, Murray Hill, NJ 07974.

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