Method of producing semiconductor device

Details Method of producing semiconductor device Method of producing semiconductor device

1992-02-10

1993-08-17

Maples, John S.

Fishing, trapping, and vermin destroying

437192, 437200, 437245, 4271263, 148DIG147, H01L 21441, H01L 21465

Patent

active

052368696

ABSTRACT:
The surface of a barrier layer interposed between a silicon substrate and aluminum wiring connected thereto is oxidized by heat treatment at 350.degree. to 450.degree. C. in an atmosphere having substantially the same composition as that of air or immersion in an oxidizing chemical to form an oxide film on the surface, and a wiring layer is then formed thereon. The presence of the oxide film inhibits interdiffusion between the silicon substrate and the aluminum wiring and reaction between the aluminum wiring and the barrier layer. Since this oxide film is formed by oxidation at the atmospheric pressure, the oxide film is not excessively oxidized even if it is exposed in air at a relatively high temperature of about 300.degree. C. The oxide film having a thickness and properties which produce the tunnel effect can be formed with good reproducibility.

REFERENCES:
patent: 4200474 (1980-04-01), Morris
patent: 4307132 (1981-12-01), Chu et al.
patent: 4742025 (1988-05-01), Ohyu et al.
patent: 4839010 (1989-06-01), Cleavelin et al.
patent: 5122477 (1992-06-01), Wolters et al.
Patent Abstracts of Japan, vol. 11, No. 325 (E-551), Oct. 22, 1987 (JP 62-113421-May 25, 1987).
Patent Abstracts of Japan, vol. 14, No. 200 (E-920), Apr. 24, 1990 (JP 2-043726-Feb. 14, 1990).
Patent Abstracts of Japan, vol. 16, No. 79 (E-1171), Feb. 26, 1992 (JP 3-268425-Nov. 29, 1991).
IBM Techanical Disclosure Bulletin, "Use of conducting oxides as a diffusion barrier in shallow junction semiconductor devices", vol. 30, No. 8, pp. 436-437, Jan. 1988, NY, US.

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