1988-10-04
1989-08-29
Edlow, Martin H.
357 237, 357 41, 357 42, H01L 2714
Patent
active
048622370
ABSTRACT:
A solid state image sensor including a plurality of sensing cells, each formed of a switching transistor and a thin film sensing device, arranged in a line or a matrix. The switching transistor is a thin film transistor (TFT) of polycrystalline silicon and the thin film sensing device utilizes a layer of amorphous silicon formed on a lower electrode which is electrically connected to the drain of the switching.
REFERENCES:
patent: 3191061 (1965-06-01), Weimer
patent: 3339075 (1967-08-01), Szepesi
patent: 4223330 (1980-09-01), Koike
patent: 4323912 (1982-04-01), Koike et al.
patent: 4472821 (1984-09-01), Mazin
Edlow Martin H.
Kaplan Blum
Seiko Epson Corporation
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