1987-11-27
1989-08-29
Edlow, Martin H.
357 4, 357 2, H01L 2978
Patent
active
048622346
ABSTRACT:
A thin-film transistor comprising an insulating substrate; an opaque metal gate electrode disposed on a portion of said insulating substrate; a gate insulating layer disposed on said insulating substrate including said gate electrode; an a-Si semiconductor film disposed on the portion of said gate insulating layer, said a-Si semiconductor film having been formed to attain self-alignment with respect to said gate electrode; a-Si contact films constituting source and drain regions, respectively, with a gap therebetween disposed on said a-Si semiconductor film, the outer end of each of said contact films being formed to attain self-alignment with respect to said gate electrode; source and drain electrodes, respectively, disposed on said source and drain regions, the thickness of each of said a-Si semiconductor film and said a-Si contact film being 100 .ANG. or more and the total amount of thicknesses thereof being 1,000 .ANG. or less.
REFERENCES:
patent: 4425572 (1984-01-01), Takafuji
patent: 4609930 (1986-09-01), Yamazaki
patent: 4746628 (1988-05-01), Takafuji
patent: 4752814 (1988-06-01), Tuan
patent: 4757361 (1988-07-01), Brodsky
Edlow Martin H.
Sharp Kabushiki Kaisha
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