Ultra-high frequency diode structure whose external connections

Details Ultra-high frequency diode structure whose external connections Ultra-high frequency diode structure whose external connections

1986-08-20

1988-04-05

Edlow, Martin H.

357 68, H01L 2348, H01L 2310

Patent

active

047362359

ABSTRACT:
A diode structure having connections utilizing beam leads as disclosed wherein two beam-leads are spaced apart by a diode chip and by a glass stud which is spaced away from the diode chip. Contacts are taken from the diode on its two main faces. One of the two lead-beams is formed in two separated parts in order to provide for an assembly of two metal portions and of a glass stud which forms three adjustable coupling capacitors.

REFERENCES:
patent: 3105922 (1963-10-01), Fukai et al.
patent: 3183407 (1965-11-01), Yasuda et al.
patent: 4189342 (1980-02-01), Kock
patent: 4190854 (1980-02-01), Redfern
"Design and Manufacture of a Microwave Low-Noise Transistor Having Beam-Leads"-Pestie et al-IEEE Trans. on Elec. Devices,-vol. Ed-24, No. 2, Feb. 1977, pp. 73-79.

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