Positively biased substrate IC with thermal oxide guard ring

Details Positively biased substrate IC with thermal oxide guard ring Positively biased substrate IC with thermal oxide guard ring

1977-04-12

1978-11-07

Clawson, Jr., Joseph E.

357 42, 357 52, H01L 2934

Patent

active

041248635

ABSTRACT:
A chemically vapor-deposited, phosphorus doped insulating layer is recessed from the scribe edge of a thermally grown oxide layer thereunder a sufficient distance to interrupt the current path from the negatively biased pad and aluminum interconnect to the positively biased substrate through the phosphorus doped insulating layer.

REFERENCES:
patent: 3226611 (1965-12-01), Haenichen
patent: 3763550 (1973-10-01), Oakes
patent: 3912559 (1975-10-01), Harigaya et al.
patent: 4001872 (1977-01-01), Khajezadeh

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