Method and apparatus for implanting radioactive gas in a base ma

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

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250423R, H01J 3728

Patent

active

041248023

ABSTRACT:
A method and apparatus for implanting radioactive gas in a base material which comprises the steps of conducting radioactive gas received in a reservoir to an ion source for ionization; accelerating said ionized radioactive gas into a high energy form; and implanting said high energy radioactive ion beam in a foil made of, for example, stainless steel, aluminium or copper and received in an ion implantation unit.

REFERENCES:
patent: 2682611 (1954-06-01), Woodward et al.
patent: 3434894 (1969-03-01), Gale
patent: 3569757 (1971-03-01), Brewer et al.
patent: 3585397 (1971-06-01), Brewer
patent: 3699334 (1972-10-01), Cohen et al.
patent: 3786359 (1974-01-01), King

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