Process for fabricating solid-state imaging device

Details Process for fabricating solid-state imaging device Process for fabricating solid-state imaging device

1987-07-24

1988-04-05

Ozaki, George T.

Fishing, trapping, and vermin destroying

437 3, 437 53, 437181, 437189, H01L 21283

Patent

active

047359080

ABSTRACT:
A solid-state imaging device having a scanning circuit and a photoconductive film formed in layers on a semiconductor substrate, and a process for forming the same, wherein high resolution with substantially no color mixing is attained. An electrode layer is formed over the semiconductor substrate for providing the plural electrodes, and a photoconductive film is formed over the electrode layer. A first transparent electrode is produced over the photoconductive film, after which a resist pattern is formed on the first transparent electrode layer corresponding to the pixels. The first transparent layer and the photoconductive film are etched according to the resist pattern to spatially isolate adjacent pixels in the first transparent layer and the photoconductive film. Adjacent pixels are isolated by etching, using the resist pattern, that part of the electrode layer on which are disposed the first transparent electrode layer and the photoconductive film between isolated pixels.

REFERENCES:
patent: 4236829 (1980-12-01), Chikamura et al.
patent: 4447291 (1984-05-01), Schulte
patent: 4507519 (1985-03-01), Kazumi et al.
patent: 4532536 (1985-07-01), Hatanaka et al.
patent: 4542578 (1985-09-01), Yamano et al.
patent: 4582721 (1986-04-01), Yoshino et al.

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