Method for forming patterns by using a high-current-density elec

Details Method for forming patterns by using a high-current-density elec Method for forming patterns by using a high-current-density elec

1986-07-08

1988-04-05

Kittle, John E.

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

430296, 430311, 430942, 2504922, 2504923, G03C 500

Patent

active

047358815

ABSTRACT:
A method incorporated in a high throughput EB lithography suitable to the fabrication of VLSI semiconductor circuit. The method comprises a step of providing patterns which are delineated to join together with an overlap determined in accordance with the time interval between the respective delineations thereof by using an electron beam having a high current density and/or high energy. When a first and a second patterns having respective edge portions contacting with each other are delineated in the order of the first pattern and the second pattern by respective exposures thereof to corresponding at least single shots of an electron beam, at least one of the first and second patterns is extended in the direction perpendicular to the edge portions so that the patterns are provided with an overlap with the amount determined in accordance with the time interval between the respective shots of the electron beam to said edge portions.

REFERENCES:
patent: 4295048 (1981-10-01), Cleland et al.
patent: 4591540 (1986-05-01), Bohlen et al.
Thompson et al., Introduction to Microlithography, American Chemical Society, Washington DC, 1983.

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