Small cell low contact resistance rugged power field effect devi

Details Small cell low contact resistance rugged power field effect devi Small cell low contact resistance rugged power field effect devi

1990-09-24

1992-06-02

James, Andrew J.

357 67, 357 71, H01L 2978, H01L 2348, H01L 2946, H01L 2962

Patent

active

051191539

ABSTRACT:
A multi-cellular power field effect semiconductor device has compact cells including a heavily doped portion of a body region which is self-aligned with respect to an aperture in the gate electrode. The intercept of this heavily doped portion of the body region with the upper surface of the device may also be self-aligned with respect to the aperture and the gate electrode. A method of producing the device is also disclosed.

REFERENCES:
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patent: 4725872 (1988-02-01), Blouke et al.
patent: 4831424 (1989-05-01), Yoshida et al.
patent: 4837606 (1989-06-01), Goodman et al.
patent: 4857983 (1989-08-01), Baliga et al.
patent: 4883767 (1989-11-01), Gray et al.
Sequeda, `The Role of Thin Film Materials . . . `, J. of Metals, Nov. 1985.
Ting et al., `Silicide for Contacts and Interconnects`, IEDM, 1984.
Kircher et al., `Interconnection Method for IC's`, IBM Tech Discl., vol. 13-2, Jul. 1970.

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