Method for forming single silicon crystals using nucleation site

Details Method for forming single silicon crystals using nucleation site Method for forming single silicon crystals using nucleation site

1996-04-05

1999-04-13

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having moving solid-liquid-solid region

117 45, 117902, 117933, C30B 1306

Patent

active

058939482

ABSTRACT:
The invention provides a method for forming a plurality of single silicon crystals over a substrate. The method forms a plurality of nucleation sites over the substrate. An amorphous silicon layer is formed over the substrate covering the plurality of silicon nucleation sites. The amorphous silicon layer is melted by using a laser beam and then crystallized to form the plurality of single silicon crystals. Each of the plurality of single silicon crystals correspond to one of the plurality of nucleation sites.

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