Recovery of lower-boiling silanes in a CVD process

Details Recovery of lower-boiling silanes in a CVD process Recovery of lower-boiling silanes in a CVD process

1988-03-25

1992-06-02

Kunemund, Robert

Chemistry of inorganic compounds

Silicon or compound thereof

Halogen containing

423348, 423349, 4272481, 4272551, C01B 3308, C01B 33107

Patent

active

051184850

ABSTRACT:
A process for the deposition of pure semiconductor silicon by reductive chemical vapor decomposition of a precursor silane, the process comprising: (1) forming and depositing semiconductor silicon on a heated substrate; (2) separating a mixture enriched in lower-boiling silanes from the effluent gases from the decomposition/deposition reactor; (3) combining the mixture enriched in lower-boiling silanes with additional tetrachlorosilane, so that there is present in the combination less than about 1.0 mole hydrogen bonded to silicon per mole of total silicon; (4) passing the combination through a bed of a solid disproportionation catalyst to facilitate disproportionation of hydrogen-containing silanes and chlorine-containing silanes to produce a stream that is reduced in content of silane, chlorosilane, and dichlorosilane and increased in content of trichlorosilane; and (5) isolating and separating the trichlorosilane.

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