Dimple-free tungsten etching back process

Details Dimple-free tungsten etching back process Dimple-free tungsten etching back process

1995-04-03

1996-06-18

Thomas, Tom

Fishing, trapping, and vermin destroying

437190, 437192, 437231, H01L 2144

Patent

active

055277365

ABSTRACT:
A new method of metallization using a dimple-free tungsten plug is described. Semiconductor device structures are formed in and on a semiconductor substrate. An insulating layer is deposited overlying the semiconductor device structures. An opening is etched through the insulating layer to contact one of the semiconductor device structures. A layer of tungsten is deposited overlying the insulating layer and within the opening. The tungsten layer is coated with a layer of spin-on-glass wherein the spin-on-glass layer planarizes the top surface of the substrate. The spin-on-glass and tungsten layers are etched back leaving the tungsten layer only within the opening as a tungsten plug wherein the presence of the spin-on-glass layer overlying the tungsten layer prevents the formation of a dimple within the tungsten plug completing the formation of the dimple-free tungsten plug in the fabrication of an integrated circuit.

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