Patent
1980-08-22
1983-07-26
Edlow, Martin H.
357 41, H01L 2978, H01L 2702
Patent
active
043957242
ABSTRACT:
In a nonvolatile semiconductor memory device using as memory cells insulated-gate type field effect transistors each having source and drain regions, a floating gate electrode, and a control gate electrode, the width of the floating and control gate electrodes is narrower at those portions which are located over a channel between the source and drain regions in each memory cell than at those portions which are not located over the channel.
REFERENCES:
patent: 3825945 (1974-07-01), Masuoka
patent: 4099196 (1978-07-01), Simko
patent: 4203158 (1980-05-01), Frohman-Bentchkowsky et al.
Asano Masamichi
Iwahashi Hiroshi
Carroll J.
Edlow Martin H.
Tokyo Shibaura Denki Kabushiki Kaisha
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