Nonvolatile semiconductor memory device

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Details

357 41, H01L 2978, H01L 2702

Patent

active

043957242

ABSTRACT:
In a nonvolatile semiconductor memory device using as memory cells insulated-gate type field effect transistors each having source and drain regions, a floating gate electrode, and a control gate electrode, the width of the floating and control gate electrodes is narrower at those portions which are located over a channel between the source and drain regions in each memory cell than at those portions which are not located over the channel.

REFERENCES:
patent: 3825945 (1974-07-01), Masuoka
patent: 4099196 (1978-07-01), Simko
patent: 4203158 (1980-05-01), Frohman-Bentchkowsky et al.

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