Vertical IGFET with internal gate and method for making same

Details Vertical IGFET with internal gate and method for making same Vertical IGFET with internal gate and method for making same

1982-11-05

1985-10-08

James, Andrew J.

357 4, 357 238, 357 2314, 357 41, 357 59, 357 88, H01L 2712, H01L 2904, H01L 2978, H01L 2702

Patent

active

045463751

ABSTRACT:
A vertical IGFET comprising a substantially planar silicon wafer with a source electrode on one major surface and a drain electrode on the opposite major surface is disclosed. An insulated gate electrode, which includes a conductive finger portion surrounded by an insulating layer, is internally disposed in the silicon wafer such that a predetermined voltage applied to the gate electrode will regulate a current flow between the source and drain electrodes. The device is fabricated utilizing an epitaxial lateral overgrowth technique for depositing monocrystalline silicon over the insulated gate which is disposed on a silicon substrate.

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