Lateral bidirectional notch FET with extended gate insulator

Details Lateral bidirectional notch FET with extended gate insulator Lateral bidirectional notch FET with extended gate insulator

1982-06-21

1985-10-08

Clawson, Jr., Joseph E.

357 2314, 357 55, 357 59, 357 86, H01L 2978

Patent

active

045463670

ABSTRACT:
Lateral FET structure is disclosed for bidirectional power switching, including AC application. A notch extends downwardly from a top major surface to separate left and right source regions and left and right channel regions, and direct the drift region current path between the channels around the bottom of the notch. Gate electrode means in the notch proximate the channels controls bidirectional conduction.

REFERENCES:
patent: 3798514 (1974-03-01), Hayashi et al.
patent: 4152714 (1979-05-01), Hendrickson et al.
patent: 4199774 (1980-04-01), Plummer
patent: 4243997 (1981-01-01), Natori et al.
P. Ou-Yang, "Double Ion-Implanted V-MOS Tech.," J. of S-S Ckts., vol. SC-12 #1, Feb. 1977, pp. 3-10.
H. Lee et al., "Short Channel FETs in V-Grooves," IBM Tech. Discl. Bull., vol. 22 #8B, Jan. 1980, pp. 3630-3634.

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