Use of ethylene glycol as a corrosion inhibitor during cleaning

Details Use of ethylene glycol as a corrosion inhibitor during cleaning Use of ethylene glycol as a corrosion inhibitor during cleaning

1997-08-26

1999-04-13

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438754, 438693, 216 38, 216 88, 216 89, 134 2, H01L 2100

Patent

active

058937560

ABSTRACT:
A post metal chemical-mechanical polishing cleaning process that effectively inhibits corrosion of a metallic plug is described. The process includes providing a partially fabricated integrated circuit (IC) substrate having a metallic plug that is formed by subjecting a metallic surface on the integrated circuit (IC) substrate to chemical-mechanical polishing, which produces a contaminated dielectric layer containing metallic contaminants. The process also includes scrubbing the IC substrate surface in the presence of a mixture including ethylene glycol and hydrofluoric acid to remove at least a portion of the contaminated dielectric layer and to effectively inhibit corrosion of the metallic plug. The mixture has ethylene glycol in an amount that is between about 2 times and about 7 times the amount of hydrofluoric acid.

REFERENCES:
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patent: 5545076 (1996-08-01), Yun et al.
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Presentation slides at CMPUG Annual Symposium, entitled "Alumina-SiO.sub.2 Interactions Under Conditions Relevant to Post-CMP Cleaning of W-Slurries", by I.J. Malik, R. Emami, C. Raghunath, and S. Raghavan of OnTrak Systems, Inc., Milpitas, California, Dec. 1996.

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