Method for chemical-mechanical planarization of stop-on-feature

Details Method for chemical-mechanical planarization of stop-on-feature Method for chemical-mechanical planarization of stop-on-feature

1996-05-21

1999-04-13

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438693, 216 38, 216 88, 216 89, H01L 2100

Patent

active

058937544

ABSTRACT:
The present invention is a method for chemical-mechanical planariztion of semiconductor wafers that is highly useful for planarazing stop-on-feature design wafers. Initially, the wafer is positioned against a liquid solution over a planarizing surface of a polishing pad. At least one of the wafer or the pad is moved with respect to the other at a relatively low velocity to maintain a substantially continuous film of liquid solution between the wafer and the pad. The temperature of a pad platen is also controlled to maintain a relatively low temperature of the liquid solution at which the solution is highly selective to a layer of material on the wafer.

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