Method of manufacturing a semiconductor device, in which a dopan

Details Method of manufacturing a semiconductor device, in which a dopan Method of manufacturing a semiconductor device, in which a dopan

1987-01-07

1988-02-16

Ozaki, George T.

Fishing, trapping, and vermin destroying

H01L 21385

Patent

active

047255641

ABSTRACT:
A method of manufacturing a semiconductor device, in which a layer (12) comprising silica and an oxide of a dopant is provided on a surface (9) of a silicon semiconductor body (1). The semiconductor body is then subjected to a heat treatment at a temperature at which transport of the dopant takes place from its oxide to the seminconductor body. The heat treatment is carried out at a first stage in an atmosphere comprising an inert gas to which up to 25% by volume of oxygen is added, at a second stage in an atmosphere of practically dry oxygen and then at a third stage in an atmosphere comprising oxygen and hydrogen. Thus, a doped zone is formed in the semiconductor body, while the surface is covered with an insulating layer of high quality.

REFERENCES:
patent: 3748198 (1973-07-01), Basi et al.
patent: 4490192 (1984-12-01), Gupta et al.
patent: 4514440 (1985-04-01), Justice et al.

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