Method for forming deep conductive feedthroughs

Details Method for forming deep conductive feedthroughs Method for forming deep conductive feedthroughs

1993-01-19

1994-06-21

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437915, 148DIG135, 148DIG164, H01L 2148

Patent

active

053228162

ABSTRACT:
An interconnect layer (40) for interposing between two active circuit layers of a multi-chip module (50). The interconnect layer includes a layer of silicon (14) having first surface and second surfaces. A first layer of dielectric material (16) is disposed over the first surface and a second layer of dielectric material (12) disposed over the second surface. The interconnect layer includes at least one electrically conductive feedthrough (42) that is formed within an opening made through the layer of silicon. The opening has sidewalls (22) that are coated with a dielectric material (24) and an electrically conductive material for providing a topside contact (26). A second contact (28) is formed from the backside of the silicon layer after removing the substrate (10). In accordance with the invention, the sidewalls have a slope associated therewith such that an area of the opening is larger at the first surface of the silicon layer than at the second surface of the silicon layer, thereby improving the contact metal step coverage. The silicon layer is comprised of <100> silicon and has a thickness in the range of approximately 10 micrometers to approximately 50 micrometers. The opening is etched through the <100> silicon layer with KOH to provide an inwardly sloping sidewall profile having an angle that is approximately equal to 54.7 degrees.

REFERENCES:
patent: 4596069 (1986-06-01), Bayraktaroglu
patent: 4765864 (1988-08-01), Holland et al.
patent: 4954458 (1990-09-01), Reid
patent: 5089431 (1992-02-01), Slatter et al.

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