Process for the manufacture of a component to limit the programm

Details Process for the manufacture of a component to limit the programm Process for the manufacture of a component to limit the programm

1992-09-18

1994-06-21

Fourson, George

Fishing, trapping, and vermin destroying

437 28, 437 43, 148DIG174, H01L 21266

Patent

active

053228030

ABSTRACT:
The manufacturing process comprises a first step of formation of an N type sink on a single-crystal silicon substrate, a second step of formation of an active area on the surface of said sink, a third step of implantation of N- dopant in a surface region of the sink inside said active area, a fourth step of growth of a layer of gate oxide over said region with N- dopant, a fifth step of N+ implantation inside said N- region, a sixth step of P+ implantation in a laterally displaced position with respect to said N+ region and a seventh step of formation of external contacts for said N+ and P+ regions. There is thus obtained a zener diode limiter, having a cut-off voltage which is stable over time and not much dependent on temperature and which does not require the addition of process steps with respect to those usually necessary for the accomplishment of EEPROM memory cells.

REFERENCES:
patent: 3595714 (1971-07-01), Thire et al.
patent: 4168999 (1979-09-01), Vora et al.
patent: 4553314 (1985-11-01), Chan et al.
patent: 4626882 (1986-12-01), Cottrell et al.
patent: 4982371 (1991-01-01), Bolan et al.
patent: 5089443 (1992-02-01), Anand et al.
Muller, Device electronic for integrated circuits second edition, John Willey Sons (1986), N.Y., p. 80.

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