Semiconductor laser with tensile-strained etch-stop layer

Details Semiconductor laser with tensile-strained etch-stop layer Semiconductor laser with tensile-strained etch-stop layer

1993-10-25

1995-01-03

Eps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 46, 437129, H01S 319

Patent

active

053793129

ABSTRACT:
Ridged waveguide and selectively-buried ridged waveguide, index-guided, visible semiconductor lasers incorporating a lattice-mismatched, preferably tensile-strained, etch-stop layer in the design and fabrication of the laser. Compared with other structures with etch-stop layers that are lattice matched, the etch-stop layer of the invention would have greater etch-rate selectivity, and the resulting structure would be more optically transparent with less transverse mode distortion and would present fewer difficulties with layer regrowth. These advantages would translate into greater design flexibility, more reliable fabrication, and better device performance. A preferred material for the etch-stop layer is Ga.sub.x In.sub.1-x P (x>0.5).

REFERENCES:
patent: 5175740 (1992-12-01), Elman et al.
patent: 5177757 (1993-01-01), Tsugami
patent: 5189680 (1993-02-01), Kimura
patent: 5282218 (1994-01-01), Okajima et al.
patent: 5305341 (1994-04-01), Nishikawa et al.
T. Tanaka, S. Minagawa and T. Kajimura, Transverse-mode-stabilized ridge stripe AlGaInP semiconductor lasers incorporating a thin GaAs etch-stop layer, Appl. Phys. Letts. 54, 1391 Apr. 1989.
K. Kobayashi, Y. Ueno, H. Hotta, A Gomyo, K. Tada, K. Hara and T. Yuasa, 632.7 nm CW operation (20.degree.C.) of AlGaInP visible laser diodes fabricated on (001) 6.degree. off toward [110] GaAs substrate, Jpn. Jour. Appl. Phys. 29, L1669 Sep. 1990.
Y. Ueno, H. Fujii, H. Sawano and K. Endo, Stable 30 Mw operation at 50.degree.C. for strained MQW AlGaInPP visible laser diodes, Electronics Letts. 28, 860 Mar. 1992.
"Transverse-mode-stabilized ridge stripe ALGaInP semiconductor lasers incorporating a thin GaAs etch-stop layer," T. Tanaka, S. Minagawa and T. Kajimura, Appl. Phys. Lett. 54, 1391-1393, 10 Apr. 1989.
"632.7 nm CW Operation (20.degree.C.) of ALGaInP Visible Laser Diodes Fabricated on (001) 6.degree. off toward [110] GaAs Substrate," K. Kobayashi, Y. Ueno, H. Hotta, A. Gomyo, K. Tada, K. Hara and T. Yuasa, Jpn, Jour, Appl. Phys. 29, L1669 Sep. 1990.
"Stable 30 mW Operation at 50.degree.C. for Strained MQW ALGaInP Visible Laser Diodes," Y. Ueno, H. Fujii, H. Sawano and K. Endo, Electronics Letts. 28, 860 Mar. 1992.

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