High frequency bipolar transistor structures

Details High frequency bipolar transistor structures High frequency bipolar transistor structures

1985-03-28

1987-03-31

Larkins, William D.

Metal treatment

Stock

Ferrous

148DIG11, 148DIG145, 357 20, 357 36, 357 68, H01L 2972, H01L 2908

Patent

active

046546871

ABSTRACT:
Structures which improve the high frequency performance of bipolar discrete or integrated transistors through minimization of base contact size and hence collector-base capacitance (and collector-substrate capacitance, if integrated), are disclosed. The transistor comprises at least one elongate emitter arm and substantially minimum-dimension base contacts positioned one facing each side of each emitter arm at at least a minimum dimension from each emitter arm. A base diffusion area is positioned under and is minimum-dimensionally larger than the outer perimeter of the areas bounded by all of the smallest imaginary triangles each including a base contact and a facing emitter arm. Specific examples are described, namely a so-called "lozenge" structure, for relatively narrow emitters, a "cross" structure for wider emitters, and a "T" structure.

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