Solid-state photoelectrical image transducer which operates with

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357 22, 357 41, H01L 2714, H01L 3100, H01L 2980, H01L 2702

Patent

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046546855

ABSTRACT:
A solid-state photoelectrical transducer comprises a plurality of multilayered semiconductive structures. Each of the multilayered structures comprises a charge transfer layer, a photoelectrical conversion layer having an array of photoelectrical conversion regions, and an intermediate layer sandwiched between the charge transfer layer and the photoelectrical conversion layer. The intermediate layer is of opposite conductivity type to the conductivity type of the other layers and includes a pair of electrically resistive regions adapted for connection to a potential source for inducing in the intermediate layer a pair of field potential distributions having oppositely inclined gradients to cause depletion of charges to occur between the charge transfer layer and each one of the photoelectrical conversion regions.

REFERENCES:
patent: 3378688 (1968-04-01), Kabell
patent: 3775623 (1973-11-01), Kamiyama et al.
patent: 4333022 (1982-06-01), Whelan et al.
patent: 4450464 (1984-05-01), Yamada

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