Magnetoresistance effect element, and magnetoresistance effect s

Details Magnetoresistance effect element, and magnetoresistance effect s Magnetoresistance effect element, and magnetoresistance effect s

1998-03-17

2000-09-05

Oda, Christine K.

Electricity: measuring and testing

Magnetic

Magnetometers

32420721, 360113, 338 32R, G11B 566

Patent

active

061148504

ABSTRACT:
A magnoresistance effect element made up of an anti-ferromagnetic layer, a fixed magnetic layer, a non-magnetic and a free magnetic layer, laminated successively onto a base layer. The ant-ferromagnetic layer is a layer film or multiple layer film comprising Ni oxide, Co oxide, or Fe oxide as a principal component, or a mixture of these. An adhesive layer for preventing peeling due to heat generated by the flow of current is provided between the base layer and the anti-ferromagnetic layer. By providing an adhesive layer between the base layer and the ferromagnetic layer in this way, the adhesive force between the base layer and the anti-ferromagnetic layer is increased, and therefore peeling does not occur, even if there are temperature changes in the magnetoresistance effect element.

REFERENCES:
patent: 5828526 (1998-10-01), Kagawa et al.
patent: 5849422 (1998-12-01), Hayashi
patent: 5869963 (1999-02-01), Saito et al.
patent: 5932343 (1999-08-01), Hayashi et al.
David A. Thompson et al., "Thin Film Magnetoresistors in Memory, storage, and Related Applications", IEEE Transactions on Magnetics, vol. Mag-11, No. 4, Jul. 1975, pp. 1039-1050.

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