Thin-film transistor and semiconductor device using thin-film tr

Details Thin-film transistor and semiconductor device using thin-film tr Thin-film transistor and semiconductor device using thin-film tr

1998-05-15

2000-06-06

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 49, 257 50, 257 51, 257 52, 257 57, 257 64, 257 65, 257 66, 257347, 257348, 257349, 257350, H01L 2976

Patent

active

060721936

ABSTRACT:
In those thin-film transistors (TFTs) employing as its active layer a silicon film crystallized using a metal element, the objective is to eliminate bad affection of such metal element to the TFT characteristics. To this end, in a TFT having as its active layer a crystalline silicon film that was crystallized using nickel (Ni), those regions corresponding to the source/drain thereof are doped with phosphorus; thereafter, thermal processing is performed. During this process, nickel residing in a channel formation region is "gettered" into previously phosphorus-doped regions. With such an arrangement, it becomes possible to reduce the Ni concentration in certain regions in which lightly-doped impurity regions will be formed later, which in turn enables suppression of affection to TFT characteristics.

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