Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device
Patent
1993-02-18
1995-01-03
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
257 42, 257613, 257616, 257631, 257633, 257635, H01L 2968, H01L 29784, H01L 2992
Patent
active
053789059
ABSTRACT:
There is interposed a buffer film composed of IIa group fluoride and having characteristics of orientation to a surface direction (111), in which mismatching in lattice constant with a crystal element of a semiconductor substrate is large and mismatching in lattice constant with IV-VI group compound ferroelectric substance is small, between the semiconductor substrate having a surface direction (100) and a ferroelectric gate film comprising the IV-VI group compound ferroelectric substance and having characteristics of polarization to the surface direction (111). Since the buffer film is an orientation film in the direction of (111) without influenced by a crystal element of the semiconductor substrate serving as a base material, the ferroelectric gate film can be oriented in the direction of (111) which is the same as the direction of polarization of the ferroelectric substance.
REFERENCES:
patent: 5218512 (1993-06-01), Nakamura
Zogg et al., "Heteroepitaxial PbTe--Si and (Pb,Sn)Se--Si Structures for Monolithic 3-5 .mu.m and 8-12 .mu.m Infrared Sensor Arrays", IEDM, 1985, pp. 121-124.
Maissen et al., "Photovoltaic Infrared Sensors in Heteroepitaxial PbTe in Si", Appl. Phys. Lett. vol. 53, No. 17, Oct. 24, 1988, pp. 1608-1610.
Asano et al., "Heteroepitaxial Growth of Group-IIa-Fluoride Films on Si Substrates" Japanese Journal of Applied Physics, vol. 22, No. 10, Oct. 1983, pp. 1474-1481.
Ishiwara et al., "Control of Crystal Orientations in Lattice-Mismatched SrF.sub.2 and (Ca,Sr)F.sub.2 Films on Si Substrates by Intermediate CaF.sub.2 Films", Japanese Journal of Applied Physics, vol. 24, No. 1, Jan. 1985, pp. L56-L58.
Zogg, "Strain Relief in Epitaxial Fluoride Buffer Layers for Semiconductor Heteroepitaxy", Appl. Phys. Lett., vol. 49, No. 15, Oct. 13, 1986, pp. 933-935.
Jackson Jerome
Rabin Steven M.
Rohm & Co., Ltd.
Tang Alice W.
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