Method of making a gallium arsenide field effect transistor

Details Method of making a gallium arsenide field effect transistor Method of making a gallium arsenide field effect transistor

1983-01-21

1985-10-08

Saba, William G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576E, 29578, 29580, 148175, 148DIG50, 148DIG88, 148DIG139, 148DIG26, 156644, 156649, 1566591, 156662, 357 22, 357 15, H01L 21205, H01L 21302

Patent

active

045451095

ABSTRACT:
A method of producing a high frequency III-V FET and the resultant structure is described wherein a doped layer is formed on a wafer of undoped, semi-insulating III-V material. The structure is then etched to form a mesa after which, a channel region is regrown from an exposed portion of the III-V substrate. The formation of the channel region defines the source and drain regions. Ohmic contacts are then made to the source and drain regions after which a Schottky contact is made to the channel region.

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Von Muench, W., "Producing . . . Devices by Oriented Lateral Overgrowth" I.B.M. Tech. Discl. Bull., vol. 10, No. 10, Mar. 1968, pp. 1469-1470.
Fukuta et al., "Power GaAs MESFET . . . Voltage" IEEE Trans. Microwave Theory & Tech., vol. MTT-24, No. 6, Jun. 1976, pp. 312-317.
"Single Crystal GaAs Films on Amorphous Substrates by the CLEFT Process" C. O. Bozler, et al., J. Vac. Sci. Technol., 20(3), Mar. 1982, pp. 720-725.
"Vapor Phase Growth of Several III-V Compound Semiconductors" J. J. Tietjen et al., Solid State Technol, Oct. 1972, pp. 42-49.

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