Method of producing a solar cell

Details Method of producing a solar cell Method of producing a solar cell

1997-09-26

2000-06-06

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438403, 438404, 136255, 136256, 136261, H01L 2100

Patent

active

06071753&

ABSTRACT:
A solar cell and a method of producing the same which realizes electrical separation of the p n junction in a simple manner, and a method of producing a semiconductor device a method of producing a semiconductor device in which an electrode is formed by using a metallic paste material on a substrate covered with a silicon nitride film or a titanium oxide film, wherein a glass paste 104 composed mainly of glass which has a property of melting silicon is provided on an n type diffusion layer 101 in the p n junction; the substrate is baked so that penetration of the n type diffusion layer 101 is effected by the glass paste; aluminum is diffused in the n type diffusion layer 101 below a p electrode 103 formed of an aluminum silver paste to thereby form a p type inversion layer 105 inverted to a p type, whereby the electrical separation of the p n junction can be realized. Further, when a metallic paste material is provided on an insulating film and the metallic paste material is baked, the material penetrates the insulating film to electrically contact with the semiconductor substrate.

REFERENCES:
patent: 4377901 (1983-03-01), David et al.
patent: 4478879 (1984-10-01), Baraona et al.
patent: 5082791 (1992-01-01), Micheels et al.
patent: 5665175 (1997-09-01), Safir
Gary C. Cheek et al, Thick-Film Metallization for Solar Cell Applications, IEEE Transactions on Electron Devices, vol. ED-31, No. 5, May 1984, pp. 602-609.
The Conference Record of the Seventeenth IEEE Photovoltaic Specialist Conference-1984, Hyatt-Orlando Hotel Kissimmee, Florida, May 1-4, 1984, Critical Processing Parameter for Screen Printer Semicrystalline Silicone Solar Cells, pp. 1347-1351.

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