Transversely injected multiple wavelength diode laser array form

Coherent light generators – Particular active media – Semiconductor

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372 45, 372 46, H01S 319

Patent

active

057646767

ABSTRACT:
This invention relates to a laser array which can produce at least two independently addressable laser beams, each of which has fully index-guided buried optical waveguides. Specifically, the array is formed by a two-step impurity disordering process, which simplifies the fabrication of laser arrays and optoelectronic integrated circuits.

REFERENCES:
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patent: 5157680 (1992-10-01), Goto
patent: 5272715 (1993-12-01), Guerin
patent: 5319655 (1994-06-01), Thornton
patent: 5323026 (1994-06-01), Paoli
patent: 5386428 (1995-01-01), Thornton et al.
patent: 5412678 (1995-05-01), Treat et al.
patent: 5436193 (1995-07-01), Beernink et al.
patent: 5438584 (1995-08-01), Paoli et al.
patent: 5465263 (1995-11-01), Bour et al.
Appl. Physics Letters, vol., 65, No. 21 pp. 2696-2698 by Thornton Nov. 1994.
"Defect Generation and Suppression During the Impurity-Induced Layer Disordering of Quantum-Sized GaAs/GaInP Layers".

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