Light-emitting diode with current-blocking

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure

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372 45, 372 46, 257 88, 257 91, 257 94, 257101, H01L 3300

Patent

active

051894963

ABSTRACT:
A surface emitting light-emitting diode has in a body of a semiconductor material a light-emitting p-n junction, a first electrode on a portion of one surface of the body and a second electrode on another surface of the body opposite the one surface. A current-block region is provided in the body under the first electrode and between the first electrode and the p-n junction. This suppresses light emission from beneath the first electrode and applies current injection only to regions where it is effective for producing surface emission so as to improve the emission efficiency of the diode.

REFERENCES:
patent: 4477824 (1984-10-01), Dutt
patent: 4719497 (1988-01-01), Tsai

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