Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1997-12-09
2000-12-12
Tran, Minh Loan
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 72, 257350, 349 38, 349 43, H01L 2904
Patent
active
061602698
ABSTRACT:
A semiconductor device having a pixel provided in an active matrix. Each pixel includes a switching transistor and a pixel capacitor, the switching transistor having a semiconductor region of one conductivity type. An auxiliary capacitor is provided wherein the semiconductor region is one electrode of the auxiliary capacitor. An insulating film is provided over the switching transistor and the auxiliary capacitor. Over the auxiliary capacitor is disposed a transparent conductive film which is connected with the semiconductor region through a contact hole provided in the insulating film. Additionally, a gate line having a part serving as the other electrode of the auxiliary capacitor is provided.
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Konuma Toshimitsu
Takemura Yasuhiko
Robinson Eric J.
Semiconductor Energy Laboratory Co,. Ltd.
Tran Minh Loan
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