Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1996-01-18
1998-06-09
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257751, 257763, H01L 2348, H01L 2352, H01L 2940
Patent
active
057639531
ABSTRACT:
A semiconductor device includes a first metal film formed on a semiconductor substrate, a second metal film formed on the first metal film and containing silver as a main component, and a protective film containing a metal element of the first metal film and covering at least the upper surface of the second metal film. The protective film is formed by annealing in an atmosphere containing a predetermined element. That is, the metal element of the first metal film is diffused into the second metal film and reacts with the predetermined element in the atmosphere on the surface of the second metal film, thereby forming the protective film. Aggregation of silver is prevented in the presence of the protective film.
REFERENCES:
"Silver Metallurgy for Semiconductor Device", Pressman et al, IBM Tech Disclosure Bulletine vol. 13, No. 5 Oct. 1970.
Iijima Tadashi
Nakasa Naomi
Nishiyama Akira
Ono Hisako
Ushiku Yukihiro
Clark S. V.
Kabushiki Kaisha Toshiba
Saadat Mahshid D.
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