Quantum dot fabrication process using strained epitaxial growth

Details Quantum dot fabrication process using strained epitaxial growth Quantum dot fabrication process using strained epitaxial growth

1994-10-27

1997-03-25

Kunemund, Robert

Fishing, trapping, and vermin destroying

117 85, H01L 2120

Patent

active

056144350

ABSTRACT:
A process for production of self-assembled quantum dots is described which does not entail any processing steps before or after growth of the quantum dots. The process uses in situ formation of three dimensional islands which occurs during epitaxy of material with a different lattice parameter than the substrate. Further deposition of the substrate material then produces single or multiple buried two dimensional layers of randomly distributed or selectively positioned and substantially uniform sized quantum dots. These layers are free of defects and interface states. The lateral dot diameters vary between 140 to 300 Angstroms by appropriate choice of deposition parameters.

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