Coating apparatus – Gas or vapor deposition – With treating means
Patent
1994-05-13
1996-06-18
Breneman, R. Bruce
Coating apparatus
Gas or vapor deposition
With treating means
118723MP, 156345, 20429839, 20429837, C23C 1600
Patent
active
055273947
DESCRIPTION:
BRIEF SUMMARY
DESCRIPTION
1. Technical Field
The present invention relates to an apparatus for plasma-enhanced processing of substrates having a recipient in which ions and reactive neutral particles (radicals) formed in the plasma act on the substrate.
Apparatuses of this type for plasma-enhanced processing are utilized both in the removal as well as in the deposition of material from, respectively on, semiconductor, metal, glass or plastic substrates.
The processing procedures carried out in apparatuses of this type are based on the combined action of the ions and of the reactive neutral particles (radicals) formed in the plasma. Whereas the neutral particles essentially strike the substrate (wafer) with thermal velocity and isotropic distribution, the ions reach the wafer with relatively great kinetic energy and strong predominant orientation.
2. State of the Art
Utilization of additional magnetic fields in plasma-enhanced processing procedures, such as e.g., in dry etching or in layer deposition, is known from a number of publications, by way of illustration DE 39 13 463 A1 or DE 38 01 205 C1.
In addition, reference is made to the publications "Magnetically Enhanced Plasma Deposition and Etching" in Solid State Technology, April 1987, pp. 99-104, "A Magnetic Multipole Reactor for High-flux Reactive Ion Etching" in J. Appl. Phys. 63(6), pp. 1899-1903, and "RF Broad Beam Ion Source for Reactive Sputtering" in Vacuum, 1986, pp. 973-976.
In these state of the art apparatuses, magnetic fields are utilized with the aim of retaining the electrons as long as possible in the plasma and thereby raise their density and probabilty of collision. In this manner, ion production is raised, as well as to a certain degree, the production of radicals. Furthermore, magnetic fields are utilized to control the plasma volume in the recipient in such a way that only the reactive neutral particles formed in the plasma can reach the substrate.
DESCRIPTION OF THE INVENTION
An element of the present invention is that it was understood that, in apparatuses for plasma-enhanced processing of substrates having a recipient in which ions and reactive neutral particles (radicals) formed in the plasma act on the substrate, the results of the processing are determined not only by the absolute value of the ionic and radical current densities on the surface of the substrate, but also by the ratio r of the ionic to the radical current densities r=j.sub.ion /j.sub.rad.
In the state of the art apparatuses for plasma-enhanced processing of substrates having a recipient in which ions and reactive neutral particles (radicals) formed in the plasma act on the substrate, as they are by way of illustration known from the afore-mentioned publications, it is however not possible to adjust the ionic and radical current densities in a concerted manner.
The object of the present invention is to provide an apparatus for plasma-enhanced processing of substrates having a recipient in which ions and reactive neutral particles (radicals) formed in the plasma act on the substrate, in which the ionic and radical current densities can largely be adjusted independently of each other.
An inventive solution to this object is set forth in claim 1. Further improvements of the present invention are put forth in the subclaims.
An element of the present invention is, therefore, to improve an apparatus for plasma-enhanced processing of substrates in such a manner that means for varying the plasma volume are provided to control the absolute values of the ionic and radical current densities and to control the relative ratio of ionic to radical current densities on the surface of the substrate.
The present invention is based on the fundamental concept of adjusting the individual current densities by means of concerted variation of the plasma volume, by way of illustration, by utilizing specific magnetic field configurations or geometry of the recipient.
The invented apparatus permits in this way raising the absolute current density of ions and radicals (chemical reactive neutral parti
REFERENCES:
patent: 4668338 (1987-05-01), Maydan
patent: 4668365 (1987-05-01), Foster
patent: 5110437 (1992-05-01), Yamada
patent: 5160398 (1992-11-01), Yanagida
patent: 5225024 (1993-07-01), Hanley
patent: 5252178 (1993-10-01), Moslehi
patent: 5292401 (1994-03-01), Yoneda
patent: 5312778 (1994-05-01), Collins
Heinrich Friedhelm
Hoffmann Peter
Breneman R. Bruce
Chang Joni Y.
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung
LandOfFree
Apparatus for plasma enhanced processing of substrates does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus for plasma enhanced processing of substrates, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus for plasma enhanced processing of substrates will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-220181