Read-only storage using enhancement-mode, depletion-mode or omit

Details Read-only storage using enhancement-mode, depletion-mode or omit Read-only storage using enhancement-mode, depletion-mode or omit

1980-07-17

1982-04-27

Hecker, Stuart N.

Static information storage and retrieval

Read only systems

Semiconductive

365168, G11C 1700, G11C 1140

Patent

active

043274242

ABSTRACT:
Read-only storage chip stores three levels per single-FET cell by providing each cell with an enhancement gate, a depletion gate or no gate connection. Level decoders convert pairs of these three-level signals to triplets of two-level data signals for binary output from the ROS.

REFERENCES:
patent: 3656117 (1972-04-01), Maley et al.
patent: 4271421 (1981-06-01), McElroy
patent: 4287570 (1981-09-01), Stark
Zbrozek, "Enhanced Performance `AND` Rom", IBM Tech. Disc. Bul., vol. 23, No. 11, pp. 5011-5012.
Irving et al, "Flip-Flops for Multiple-Valued Logic", IEEE Transactions on Computers, vol. C-25, No. 3, pp. 237-246.

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