Resilient contact ring for providing a low impedance connection

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Details

357 68, 357 81, 357 82, H01L 2342, H01L 2344, H01L 2346

Patent

active

043273700

ABSTRACT:
A semiconductor device comprises a body of semiconductor material having a base-emitter structure on a first surface of the body. The base emitter structure includes a plurality of discrete emitter regions interdigitated with a base region having a base contact on the base region. A base contact ring is attached coaxially to the base contact. An improved base terminal structure comprises a conductive base feed-through ring having a base terminal integral with the feed-through ring. The base feed-through ring is spaced from and concentric with the base contact ring. The base terminal structure further includes a resilient contact ring attached to the base contact ring and the base feed-through ring to provide a low impedance interconnection between the base contact ring and the base feed-through ring.

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patent: 3852805 (1974-12-01), Brzozowski
patent: 3978518 (1976-08-01), Kessler et al.
patent: 4126879 (1978-11-01), Kessler et al.

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