Process of fabricating a thermoelectric module formed of V-VI gr

Details Process of fabricating a thermoelectric module formed of V-VI gr Process of fabricating a thermoelectric module formed of V-VI gr

1997-03-03

1998-06-09

Graybill, David

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Thermally responsive

438109, 136201, H01L 3134

Patent

active

057632936

ABSTRACT:
A process wherein powder of p
-type semiconductor thermoelectric materials expressed as (Bi, Sb).sub.2 (Te, Se).sub.3 is hot pressed under the pressure equal to or greater than 400 kgf/cm.sup.2 at 200 degrees to 400 degrees in centigrade for a time period between {(-T/5)+90} minutes and 150 minutes or at 400 degrees to 500 degrees in centigrade for a time period between 5 minutes and 150 minutes so as to increase the figure of merit by virtue of the strain left in the crystal and/or micro crystal grain, and pieces of p
-type semiconductor thermoelectric material are assembled with electrodes so as to obtain a thermoelectric module for a high thermoelectric conversion efficiency.

REFERENCES:
patent: 3086068 (1963-04-01), Charland et al.
patent: 3182391 (1965-05-01), Charland et al.
patent: 3900603 (1975-08-01), Rittmayer et al.
patent: 4447277 (1984-05-01), Jayadev et al.
patent: 4491679 (1985-01-01), Moore
patent: 5356485 (1994-10-01), Kreider

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