Method for producing semiconductor substrate by wafer bonding

Details Method for producing semiconductor substrate by wafer bonding Method for producing semiconductor substrate by wafer bonding

1997-06-24

1998-06-09

Fourson, George R.

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

H01L 2176

Patent

active

057632880

ABSTRACT:
A semiconductor substrate is produced by bonding a pair of substrate materials together, at least one of which comprises a semiconductor substrate material with or without an insulating layer on a surface thereof. The production includes treating the substrate materials with a suitable liquid such that the pair of substrate materials are immersed in the liquid, the substrate materials are superimposed on each other in the liquid, the substrate materials in their superimposed position are lifted from the liquid, and a portion of the liquid captured between the substrate materials is removed so as to bond the substrate materials together.

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Stevie, F.A. et al., "Boron contamination of surfaces in silicon microelectronics processing: Characterization and causes," Journal of Vacuum Science & Tech. A, vol. 9, No. 5, pp. 2813-16 (1991).
"Single-Crystal Silicon on Non-Single-Crystal Insulators," edited by G.W. Cullen, Journal of Crystal Growth, vol. 63, No. 3, pp. 429-590 (1983).
Haisma et al., JAP. J. APPL. PHYS., vol. 28, No. 8 (1989) pp. 1426-1443.

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