Method for forming dielectric layer

Details Method for forming dielectric layer Method for forming dielectric layer

1996-05-29

1998-06-09

King, Roy V.

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of substrate or post-treatment of coated substrate

427579, 427560, 427600, 427255, 4272551, 4272552, 4272553, 4272557, 438788, 438789, 438790, B05D 306

Patent

active

057630186

ABSTRACT:
A dielectric layer is formed on a semiconductor substrate by the steps of depositing water molecules and plasma-dissociated products of water on a dielectric layer-forming surface of a substrate according to a plasma enhanced CVD process, and forming a dielectric layer on the dielectric layer-forming surface of the substrate according to a CVD process using a silicon-containing gas and an oxidant as starting gases. Alternatively, water molecules alone may be deposited on the dielectric layer-forming surface according to a normal or reduced pressure CVD process used in placed of the above-mentioned CVD process. By this, the dielectric layer becomes so fluid that a final layer is free of any void and flat. In addition, the dielectric layer having a low concentration of hydroxyl group therein with a good quality can be formed at high productivity.

REFERENCES:
patent: 5314724 (1994-05-01), Tsukune et al.
patent: 5462899 (1995-10-01), Ikeda
patent: 5525550 (1996-06-01), Kato

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