Patent
1984-04-26
1986-03-11
Edlow, Martin H.
357 5, 357 65, 357 4, H01L 4902, H01L 3922, H01L 2348
Patent
active
045757410
ABSTRACT:
This invention relates generally to cryogenic amplifying-switching devices and more specifically relates to a cryogenic transistor with a superconducting base and a collector isolated from the base by a semiconductor element. Still more specifically, the invention is directed to a three terminal, transistor-like device which incorporates three metal layers. The first and second of the three layers are separated by an insulating tunnel barrier and the second and third layers are separated by a semiconductor layer of a thickness sufficient to inhibit tunnelling. The semiconductor layer has a barrier height (low) which is sufficient to permit the passage of quasiparticles from the second layer while simultaneously inhibiting the passage of Cooper pairs. The second layer is a superconductor while the first and third layers may be superconductors or normal metals. The second and third layers are connected to the semiconductor layer by means of ohmic contacts.
REFERENCES:
patent: 3155886 (1964-11-01), Pankove
patent: 3178594 (1965-04-01), Pollack
patent: 3204115 (1965-08-01), Parmenter
patent: 3275844 (1966-09-01), Simmons
patent: 3372315 (1968-03-01), Hartman
patent: 4157555 (1970-06-01), Gray
patent: 4220959 (1980-09-01), Kroger
patent: 4334158 (1982-06-01), Faris
Edlow Martin H.
Henn Terri M.
International Business Machines - Corporation
Kilgannon Thomas J.
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